Recently Published Documents

Title Document # Date Details
Registration - Plastic Quad Flatpack, 8 Terminal, 1.27 mm Pitch Package

Designator: PQFP-F8[10]_I127-R5p51x6.54Z1P1
Item: 11.11-959

MO-341A Oct 2019 view
Registration - Plastic Dual Small Outline Surface Terminal, Wettable Flank Package

Designator: PDSO_N#[#]_I#-R#x#Z#-CturET0p04
Item: 11.11-974, Access STP Files for MO-340A
Cross Reference: DR4.8, DR4.16, DR4.20

MO-340A Oct 2019 view
STANDARD MANUFACTURERS IDENTIFICATION CODE

The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to http://www.jedec.org/Home/MIDCODE_request.cfm

JEP106BA Oct 2019 view
SYSTEM LEVEL ESD: PART II: IMPLEMENTATION OF EFFECTIVE ESD ROBUST DESIGNS

JEP162A, while establishing the complex nature of System Level ESD, proposes that an efficient ESD design can only be achieved when the interaction of the various components under ESD conditions are analyzed at the system level. This objective requires an appropriate characterization of the components and a methodology to assess the entire system using simulation data. This is applicable to system failures of different categories (such as hard, soft, and electromagnetic interference (EMI)). This type of systematic approach is long overdue and represents an advanced design approach which replaces the misconception, as discussed in detail in JEP161, that a system will be sufficiently robust if all components exceed a certain ESD level.

JEP162A Sep 2019 view
Registration - Plastic Bottom Flatpack 28 Terminal Package

Item 11-11.975, STP File for MO-339A

MO-339A Sep 2019 view
Registration - Plastic Bottom Grid Array Ball, 0.80 MM x 0.70 MM Pitch Rectangular Family Package

Item 11.11-973, Access STP Files for MO-338A

MO-338A Sep 2019 view
DESCRIPTIVE DESIGNATION SYSTEM FOR ELECTRONIC-DEVICE PACKAGES

This standard establishes requirements for the generation of electronic-device package designators for the JEDEC Solid State Technology Association. The requirements herein are intended to ensure that such designators are presented in as uniform a manner as practicable. Item 11.2-962.

JESD30I Aug 2019 view
SPD Annex L, Serial Presence Detect (SPD) for DDR4 SDRAM Modules, Release 4

This annex describes the serial presence detect (SPD) values for all DDR4 modules covered in Document Release 4. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. Item 2220.01G. This is an editorial revision to the publication in January 2017.

SPD4.1.2.L-4 Aug 2019 view
SPD Annex L: Serial Presence Detect (SPD) for DDR4 SDRAM Modules, Release 5

This annex describes the serial presence detect (SPD) values for all DDR4 modules covered in Document Release 5. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. Item 2276.05.

SPD4.1.2.L-5 Aug 2019 view
288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Unbuffered DIMM Design Specification

This specification defines the electrical and mechanical requirements for the 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs are intended for use as main memory when installed in PCs. Item 2241.13A

MODULE4.20.26 Aug 2019 view
260-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM SODIMM Design Specification

This document defines the electrical and mechanical requirements for 260 pin, 1.2 V (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops and other systems. This document also contains the DDR4 DIMM Label, Ranks Definition. Item 2224.13A

MODULE4.20.25 Aug 2019 view
SERIAL FLASH DISCOVERABLE PARAMETERS (SFDP)

The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. Any company may request a Function Specific ID by making a request to the JEDEC office at juliec@jedec.org. Please include “Function Specific ID Request, JESD216” in the email subject line. Item 1775.15 and 1775.18.

JESD216D.01 Aug 2019 view
DDR4 DIMM Product Label, Hybrid, Pre-Production, DDR4E

This section covers DDR4 and DDR4E in both DRAM-only module types and Hybrid module types, as well as pre-production modules of both types. Item 2224.13A

DIMM-LABEL4.19.4 Aug 2019 view
DDR4 DATA BUFFER DEFINITION (DDR4DB02)

This standard defines standard specifications for features and functionality, DC and AC interface parameters and test loading for definition of the DDR4 data buffer for driving DQ and DQS nets on DDR4 LRDIMM applications. Any TBDs as of this document, are under discussion by formulating committee. Item 314.11D

*If you downloaded this file between 8/7/2019 and 8/14/2019, please download again, the publication date on the document was incorrected and has been fixed.

JESD82-32A Aug 2019 view
DDR4 REGISTERING CLOCK DRIVER (DDR4RCD02)

This document defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the DDR4 Registering Clock Driver (RCD) with parity for driving address and control nets on DDR4 RDIMM and LRDIMM applications. Any TBDs as of this document, are under discussion by the formulating committee. Item 314.08F.

*If you downloaded this file between 8/7/2019 and 8/14/2019, please download again, the publication date on the document was incorrected and has been fixed.

JESD82-31A Aug 2019 view
DDR5 DIMM SMT 288 PIN SOCKET OUTLINE 0.85 MM PITCH SKT

Item 11.14-196

SO-023B Jul 2019 view
THERMAL TEST CHIP GUIDELINE (WIRE BOND AND FLIP CHIP)

The purpose of this document is to provide a design guideline for thermal test chips used for integrated circuit (IC) and transistor package thermal characterization and investigations. The intent of this guideline is to minimize the differences in data gathered due to nonstandard test chips and to provide a well-defined reference for thermal investigations.

JESD51-4A Jul 2019 view
0.5 V LOW VOLTAGE SWING TERMINATED LOGIC (LVSTL05)

This standard defines power supply voltage range, dc interface, switching parameter and overshoot/undershoot for high speed low voltage swing terminated NMOS driver family digital circuits. The specifications in this standard represent a minimum set of interface specifications for low voltage terminated circuits. Item 159.03

JESD8-33 Jun 2019 view
MECHANICAL SHOCK – DEVICE AND SUBASSEMBLY

Device and Subassembly Mechanical Shock Test Method is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical Shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.This document also replaces JESD22-B104.

JESD22-B110B.01 Jun 2019 view
POD135 - 1.35 V PSEUDO OPEN DRAIN I/O

This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedance's, and the termination and calibration scheme for 1.35 V Pseudo Open Drain I/Os. The 1.35 V Pseudo Open Drain interface, also known as POD135, is primarily used to communicate with GDDR5 or GDDR5M SGRAM devices. Item 146.01B

JESD8-21C Jun 2019 view
NAND FLASH INTERFACE INTEROPERABILITY

This document defines a standard NAND flash device interface interoperability standard that provides means for a system to be designed that can support Asynchronous SDR, Synchronous DDR and Toggle DDR NAND flash devices that are interoperable between JEDEC and ONFI member implementations. This standard was jointly developed by JEDEC and the Open NAND Flash Interface Workgroup, hereafter referred to as ONFI. Item 1765.00

JESD230D Jun 2019 view
POD125 - 1.25 V PSEUDO OPEN DRAIN I/O

This standard defines the DC and AC single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.25 V Pseudo  Open Drain I/Os. The 1.25 V Pseudo Open Drain interface, also known as POD125, is primarily used to communicate with GDDR6 SGRAM devices.

JESD8-30A Jun 2019 view
288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design Specification

This specification defines the electrical and mechanical requirements for 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.05E

MODULE4.20.28 May 2019 view
Registration - Silicon Bottom Grid Array Column, 0.048 x 0.0275 Pitch, Rectangular Family Package

Package Designator: SBGA-M#(#)_I0p055

Item Number: 11.4-966

MO-316B Apr 2019 view
Annex K, Raw Card K, in 260-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM SODIMM Design Specification

This specification defines the electrical and mechanical requirements for Raw Card K, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.59A Editorial.

MODULE4.20.25.K.01 Apr 2019 view
Standard - Plastic Dual Small Outline (SO) Family, Gull Wing, 1.27 mm Pitch Package. PDSO-G.

Item 11.11-972(E).

MS-012G.01 Apr 2019 view
Registration - 262 Pin SODIMM, 0.50 mm Pitch Package

Item 14-192

MO-337A Apr 2019 view
Registration - 262 Pin DDR5 SODIMM, 0.50 mm Pitch Socket

Item 14-193

SO-024A Apr 2019 view
Annex B, R/C B, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design Specification

This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.50.

MODULE4.20.28.B Mar 2019 view
Annex C, R/C C, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design Specification

This document defines the electrical and mechanical requirements for Raw Card C, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.49.

MODULE4.20.28.C Mar 2019 view
Annex E, R/C E, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design Specification

This specification defines the electrical and mechanical requirements for Raw Card E, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.46

MODULE4.20.28.E Mar 2019 view
Annex A, R/C A, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Unbuffered DIMM Design Specification

This document defines the electrical and mechanical requirements for Raw Card A, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.38.

MODULE4.20.26.A Feb 2019 view
LOW POWER DOUBLE DATA RATE 5 (LPDDR5)

This document defines the LPDDR5 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5 device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3) and LPDDR4 (JESD209-4). Item 1854.99

JESD209-5 Feb 2019 view
Design Requirements - Ball Grid Array Package (BGA)

Item 11.2-948E

DR-4.14J.01 Feb 2019 view
EMBEDDED MULTI-MEDIA CARD (e•MMC), ELECTRICAL STANDARD (5.1)

This document provides a comprehensive definition of the e•MMC Electrical Interface, its environment, and handling. It also provides design guidelines and defines a tool box of macro functions and algorithms intended to reduce design-in overhead. The purpose of this standard is the definition of the e•MMC Electrical Interface, its environment and handling. It provides guidelines for systems designers. Item 67.14.

This document replaces all past versions, however links to the replaced versions are provided here for reference only: JESD84-B51, February 2015; JESD84-B50.1, July 2014 (Editorial revision of JESD84-B50); JESD84-B50, September 2013 (Revision of JESD84-B451); JESD84-B451, June 2012 (Revision of JESD84-B45, June 2011)

JESD84-B51A Jan 2019 view
DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0

This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices.

JEP173 Jan 2019 view
SOLID STATE RELIABILITY ASSESSMENT QUALIFICATION METHODOLOGIES

The purpose of this publication is to provide an overview of some of the most commonly used systems and test methods historically performed by manufacturers to assess and qualify the reliability of solid state products. The appropriate references to existing and proposed JEDEC (or EIA) standards and publications are cited. This document is also intended to provide an educational background and overview of some of the technical and economic factors associated with assessing and qualifying microcircuit reliability.

JEP143D Jan 2019 view
ANSI/ESDA/JEDEC JOINT STANDARD FOR ELECTROSTATIC DISCHARGE SENSITIVITY TESTING – CHARGED DEVICE MODEL (CDM) – DEVICE LEVEL

This standard establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this standard. This test method combines the main features of JEDEC JESD22-C101 and ANSI/ESD S5.3.1.

JS-002-2018 Jan 2019 view
Registration - Plastic Multi Position Flange Mount Mixed Technology, 0.10 in. Pitch Package

Item 11.10-457

TO-220L Jan 2019 view
Annex A: Differences between JESD21C Release 28 and its predecessor JESD21C, Release 27.

This table briefly describes the changes made to this standard, JESD21-C, Release 28, compared to its predecessor, JESD21C, Release 27.

AnnexA - JESD21C Jan 2019 view
GUIDELINES FOR GaAs MMIC PHEMT/MESFET AND HBT RELIABILITY ACCELERATED LIFE TESTING

These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors.  While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). 

JEP118A Dec 2018 view
DDR DIMM Product Label DIMM-LABEL4.19-1 Dec 2018 view
DDR2 DIMM Product Label

This section covers DDR2 DIMM labels.

DIMM-LABEL4.19.2 Dec 2018 view
DDR3 DIMM Product Label

This section covers DDR3 DIMM labels.

DIMM-LABEL4.19.3 Dec 2018 view
HIGH BANDWIDTH MEMORY (HBM) DRAM

The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet.

Item 1797.99J.

JESD235B Nov 2018 view
GRAPHICS DOUBLE DATA RATE 6 (GDDR6) SGRAM STANDARD

This document defines the Graphics Double Data Rate 6 (GDDR6) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments.  The purpose of this Specification is to define the minimum set of requirements for 8 Gb through 16 Gb x16 dual channel GDDR6 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR6 SGRAM vendors providing compatible devices. Some aspects of the GDDR6 standard such  as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. This document was created based on some aspects of the GDDR5 Standard (JESD212). Item 1836.99D.

JESD250B Nov 2018 view
ELECTRICALLY ERASABLE PROGRAMMABLE ROM (EEPROM) PROGRAM/ERASE ENDURANCE AND DATA RETENTION TEST

This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94.

JESD22-A117E Nov 2018 view
Annex B, R/C B, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Unbuffered DIMM Design Specification

This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.29.

MODULE4.20.26.B Nov 2018 view
Annex D, R/C D, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Unbuffered DIMM Design Specification

This document defines the electrical and mechanical requirements for Raw Card D, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.37.

MODULE4.20.26.D Nov 2018 view
Annex A, R/C A, in 260-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM SODIMM Design Specification

This document defines the electrical and mechanical requirements for Raw Card A, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.63.

MODULE4.20.25.A Nov 2018 view

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