Recently Published Documents

Title Document # Date Details
DEFINITION OF THE SSTU32866 1.8 V CONFIGURABLE REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTU32866 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTU32866 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision as shown in Annex A of the document.

JESD82-10A.01 Oct 2021 view
DEFINITION OF THE SSTUA32S865 AND SSTUA32D865 28-BIT 1:2 REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUA32S865 and SSTUA32D865 registered buffer with parity for 2 rank by 4 or similar high-density DDR2 RDIMM applications. This is a minor editor revision as shown in Annex A of the document.

JESD82-19A.01 Oct 2021 view
NAND FLASH INTERFACE INTEROPERABILITY

This document defines a standard NAND flash device interface interoperability standard that provides means for a system to be designed that can support Asynchronous SDR, Synchronous DDR and Toggle DDR NAND flash devices that are interoperable between JEDEC and ONFI member implementations. This standard was jointly developed by JEDEC and the Open NAND Flash Interface Workgroup, hereafter referred to as ONFI. Item 1767.57

JESD230E Oct 2021 view
Registration - Shipping and Handling Tray for DDR5 DIMM Microelectronic Assembly

Designator: N/A
Item: 11.5-997, Access STP Files for CO-036B
Cross Reference: N/A

CO-036B Oct 2021 view
STANDARD MANUFACTURERS IDENTIFICATION CODE

The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to http://www.jedec.org/Home/MIDCODE_request.cfm

JEP106BD Oct 2021 view
REGISTRATION - Battery Cell R/A T/H Type Connector, 1.2 mm Pitch

Designator: PSXC-P6_I1p2-R11p6x5p85Z2p0-R0p3x0p31H1p16Item: 11.14-198, Access STP Files for SO-026ACross Reference: N/A

SO-026A Oct 2021 view
REGISTRATION - Battery Cell R/A SMT Type Connector, 1.2 mm Pitch

Designator: PSXC-L6_I1p2-R11p6x5p85Z2p07-R0p3x0p6ET0p07
Item: 11.14-198, Access STP Files for SO-028A
Cross Reference: N/A

SO-028A Oct 2021 view
DDR5 SDRAM

This document defines the DDR5 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 8Gb through 32Gb for x4, x8, and x16 DDR5 SDRAM devices. This standard was created based on the DDR4 standards (JESD79-4) and some aspects of the DDR, DDR2, DDR3 & LPDDR4 standards (JESD79, JESD79-2, JESD79-3 & JESD209-4). Item 1848.99K.

JESD79-5A Oct 2021 view
DEFINITION OF THE SSTUB32868 1.8 V CONFIGURABLE REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications. SSTU32S2868 denotes a single-die implementation and SSTU32D868 denotes a dual-die implementation. This is a minor editorial revision as shown in Annex A of the document.

JESD82-14A.01 Oct 2021 view
DEFINITION OF THE SSTUA32866 1.8 V CONFIGURABLE REGISTERED BUFFER WITH PARITY TEST FOR DDR2 RDIMM APPLICATIONS

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUA32866 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTUA32866 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision as shown in Annex A of the document.

JESD82-16A.01 Oct 2021 view
STANDARD FOR DEFINITION OF THE SSTV16859 2.5 V, 13-BIT TO 26-BIT SSTL_2 REGISTERED BUFFER FOR STACKED DDR DIMM APPLICATIONS:

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTV16859 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM applications. The purpose is to provide a standard for the SSTV16859 logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision, shown in Annex A of the document.

JESD82-4B.01 Oct 2021 view
DEFINITION OF SSTU32865 REGISTERED BUFFER WITH PARITY FOR 2R x 4 DDR2 RDIMM APPLICATIONS

This standard provides the functional definition, ball-out configuration and package outline, signal definitions and input/output characteristics for a 28-bit 1:2 registered driver with parity suitable for use on DDR2 RDIMMs. The SSTU32865 integrates the functional equivalent of two SSTU32864 devices (as defined in JESD82-7) into a single device, thereby easing layout and board design constraints especially on high density RDIMMs such as dual rank, by four configurations. Moreover, the optional use of a parity function is provided for, permitting detection and reporting of parity errors across its 22 data inputs. JESD82-9 specifies a 160-pin Thin-profile, fine-pitch ball-grid array (TFBGA) package. This is a minor editorial revision as shown in Annex A of the document.

JESD82-9B.01 Oct 2021 view
TEST METHOD FOR BEAM ACCELERATED SOFT ERROR RATE

This test is used to determine the terrestrial cosmic ray Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g., flip-flops) by measuring the error rate while the device is irradiated in a neutron or proton beam of known flux. The results of this accelerated test can be used to estimate the terrestrial cosmic ray induced SER for a given terrestrial cosmic ray radiation environment. This test cannot be used to project alpha-particle induced SER.

JESD89-3B Sep 2021 view
Addendum No. 1 to JESD251 - OPTIONAL x4 QUAD I/O WITH DATA STROBE

This purpose of the addendum is to add an optional 4-bit bus width (x4) to JESD251, xSPI standard. The xSPI interface currently supports a x1 interface that acts as a bridge to legacy SPI functionality as well as the x8 interface intended to achieve dramatically higher bus  performance than legacy SPI memory implementations. Item 1775.15. This is an editorial revision to JESD251-1, October 2018

JESD251-1.01 Sep 2021 view
MEASUREMENT AND REPORTING OF ALPHA PARTICLE AND TERRESTRIAL COSMIC RAY INDUCED SOFT ERRORS IN SEMICONDUCTOR DEVICES

This specification defines the standard requirements and procedures for terrestrial soft-error-rate (SER) testing of integrated circuits and reporting of results. Both real-time (unaccelerated) and accelerated testing procedures are described. At terrestrial, Earth-based altitudes, the predominant sources of radiation include both cosmic-ray radiation and alpha-particle radiation from radioisotopic impurities in the package and chip materials. An overall assessment of a deviceís SER is complete, only when an unaccelerated test is done, or accelerated SER data for the alpha-particle component and the cosmic-radiation component has been obtained.

JESD89B Sep 2021 view
SERIAL FLASH DISCOVERABLE PARAMETERS (SFDP)

The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. Any company may request a Function Specific ID by making a request to the JEDEC office at juliec@jedec.org. Please include “Function Specific ID Request, JESD216” in the email subject line. Item 1775.15 and 1775.18.

JESD216E Sep 2021 view
EXPANDED SERIAL PERIPHERAL INTERFACE (xSPI) FOR NON VOLATILE MEMORY DEVICES

This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a master interface having a low signal count and high data transfer bandwidth with access to multiple sources of slave devices compliant with the interface. It is also, intended for use by peripheral developers or vendors interested in providing slave devices compliant with the standard, including non-volatile memories, volatile memories, graphics peripherals, networking peripherals, FPGAs, sensors, etc. Item 1775.64.

JESD251B Sep 2021 view
DDR5 REGISTERING CLOCK DRIVER DEFINITION (DDR5RCD01)

This document defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the DDR5 Registering Clock Driver (RCD) with parity for driving address and control nets on DDR5 RDIMM and LRDIMM applications. The DDR5RCD01 Device ID is DID = 0x0051.

JESD82-511 Aug 2021 view
DDR5 288 Pin U/R/LR DIMM Connector Performance Standard, DDR5 PS-005A.01 Aug 2021 view
GENERAL REQUIREMENTS FOR DISTRIBUTORS OF COMMERCIAL AND MILITARY SEMICONDUCTOR DEVICES

This standard identifies the general requirements for Distributors that supply Commercial and Military products. This standard applies to all discrete semiconductors, integrated circuits and Hybrids, whether packaged or in wafer/die form, manufactured by all Manufacturers. The requirements defined within this document are only applicable to products for which ownership remains with the Distributor or Manufacturer.

JESD31F Aug 2021 view
ENCLOSURE FORM FACTOR FOR SSD DEVICES, VERSION 1.0

This document specifies the enclosure form factor which can be used with various type of SSD devices: outline of the top and bottom enclosure, three screw holes to mount the enclosure on the system, and two clamping holes in the top enclosure to lock to the connector. Item 318.06. This is a minor editorial revision detailed in Annex D.

JESD253.01 Aug 2021 view
XFM DEVICE, Version 1.0

This standard specifies the mechanical and electrical characteristics of the XFM Device. Such characteristics include, among others, package dimensions, pin layout, signal assignment, power supply voltages, currents, and electrical characteristics of the PCIe interface.

JESD233 Aug 2021 view
COPY-EXACT PROCESS FOR MANUFACTURING

This publication defines the requirements for Copy-Exact Process (CEP) matching, real-time process control, monitoring, and ongoing assessment of the CEP. The critical element requirements for inputs, process controls, procedures, process indicators, human factors, equipment/infrastructure and matching outputs are given. Manufacturers, suppliers and their customers may use these methods to define requirements for process transfer within the constraints of their business agreements.

JEP185 Aug 2021 view
TEST METHOD FOR ALPHA SOURCE ACCELERATED SOFT ERROR RATE

This test method is offered as standardized procedure to determine the alpha particle Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flipflops) by measuring the error rate while the device is irradiated by a characterized, solid alph source.

JESD89-2B Jul 2021 view
TEST METHOD FOR REAL-TIME SOFT ERROR RATE

This test is used to determine the Soft Error Rate (SER) of solid state volatile memory arrays and bistable logic elements (e.g. flip-flops) for errors which require no more than re-reading or re-writing to correct and as used in terrestrial environments. It simulates the operating condition of the device and is used for qualification, characterization, or reliability monitoring. This test is intended for execution in ambient conditions without the artificial introduction of radiation sources.

JESD89-1B Jul 2021 view
HIGH TEMPERATURE STORAGE LIFE

The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices.  The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). Thermally activated failure mechanisms are modeled using the Arrhenius Equation for acceleration. During the test, accelerated stress temperatures are used without electrical conditions applied. This test may be destructive, depending on time, temperature and packaging (if any).

JESD22-A103E.01 Jul 2021 view
METHODS FOR CALCULATING FAILURE RATES IN UNITS OF FITS

This standard establishes methods for calculating failure rates in units of FITs by using data in varying degrees of detail such that results can be obtained from almost any data set. The objective is to provide a reference to the way failure rates are calculated.

JESD85A Jul 2021 view
JEDEC MODULE SIDEBAND BUS (SidebandBus)

This standard is a minor editorial revision to JESD403-1, it defines the assumptions for the system management bus for next generation memory solutions; covering the interface protocol, use of hub devices, and voltages appropriate to these usages. Item 2260.37B.

JESD403-1.01 Jul 2021 view
Registration - Plastic Dual Small Outline Surface Terminal, Wettable Flank Package

Designator: PDSO_N#[#]_I#-R#x#Z#-CturET0p04 
Item: 11.11-994, Access STP Files for MO-340B
Cross Reference: DR4.8, DR4.16, DR4.20

MO-340B Jul 2021 view
Registration - Metal Enclosure for SSD Devices, E1.S and M.2

Designator: MMXH-R(##)x36p75Z(##)
Item: 11.14-205, Access STP Files for MO-348A
Cross Reference: N/A

MO-348A Jul 2021 view
LOW POWER DOUBLE DATA RATE 5 (LPDDR5)

This document defines the LPDDR5 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5 device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3) and LPDDR4 (JESD209-4). Item  1854.99B.

JESD209-5B Jun 2021 view
LOW POWER DOUBLE DATA RATE 4 (LPDDR4)

This document defines the LPDDR4 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this standard is to define the minimum set of requirements for a JEDEC compliant 16 bit per channel SDRAM device with either one or two channels. LPDDR4 dual channel device density ranges from 4 Gb through 32 Gb and single channel density ranges from 2 Gb through 16 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2) and LPDDR3 (JESD209-3). Committee Item: 1824.42D

JESD209-4D Jun 2021 view
HIGHLY ACCELERATED TEMPERATURE AND HUMIDITY STRESS TEST (HAST)

The purpose of this test method is to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs severe conditions of temperature, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. This is a minor editorial edit to JESD22A110E, July 2015 approved by the formulating committee.

JESD22-A110E.01 May 2021 view
ACCELERATED MOISTURE RESISTANCE - UNBIASED HAST

The Unbiased HAST is performed for the purpose of evaluating the reliability of nonhermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under noncondensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g., galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive.

JESD22-A118B.01 May 2021 view
REPLAY PROTECTED MONOTONIC COUNTER (RPMC) FOR SERIAL FLASH DEVICES

This document provides the requirements for an additional block called as Replay Protection Monotonic Counter. (RPMC) Replay Protection provides a building block towards providing additional security. This block requires modifications in both a Serial Flash device and Serial Flash Controller. The standard defines new commands for Replay Protected Monotonic Counter operations. A device that supports RPMC can support these new commands as defined in this standard.

JESD260 Apr 2021 view
SERIAL FLASH RESET SIGNALING PROTOCOL

This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a signaling protocol for hardware resetting the Serial Flash device. In is also intended for use by peripheral developers or vendors interested in providing Serial Flash devices compliant with the standard. This standard defines a signaling protocol that allows the host to reset the slaved Serial Flash device without a dedicated hardware reset pin. Item 1775.06.

JESD252.01 Apr 2021 view
JC-42.6 MANUFACTURER IDENTIFICATION (ID) CODE FOR LOW POWER MEMORIES

This document defines the JC-42.6 Manufacturer ID. This document covers Manufacturer ID Codes for the following technologies: LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), LPDDR4 (JESD209-4), Wide-IO (JESD229), and Wide-IO2 (JESD229-2). The purpose of this document is to define the Manufacturer ID for these devices. Item No. 1725.03C. See Annex for additions/changes. To make a request for an ID code: https://www.jedec.org/id-codes-low-power-memories

JEP166D Apr 2021 view
Registration - 84 pin DDIMM, 0.60 mm pitch Microelectronic Assembly

Designator: PDMA-N84-I0p6-R85p13xY#Z#R1p98x0p43Item: 11.11-991, Access STP Files for MO-335ACross Reference:

MO-335A Apr 2021 view
ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING – REPORTING ESD WITHSTAND LEVELS ON DATASHEETS

This document is intended to guide device manufacturers in developing datasheets and to device customers in understanding datasheet entries.

JEP178 Apr 2021 view
Design Requirements - Wafer Level Ball Grid Arrays (WLBGA).

Item 11.2-965(E)

DR-4.18A.01 Apr 2021 view
FLIP CHIP TENSILE PULL

The Flip Chip Tensile Pull Test Method is performed to determine the fracture mode and strength of the solder bump interconnection between the flip chip die and the substrate. It should be used to assess the consistency of the chip join process. This test method is a destructive test.

JESD22-B109C Mar 2021 view
GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION

The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well.

JEP184 Mar 2021 view
Registration - 39 Pin Removable Memory, 1.00 mm Pitch Microelectronic Assembly

Designator: PBMA-N32[39]_Ip0-R14p1x18p1Z1p65-R0p71x1p1 
Item: 11.11-987, Access STP Files for MO-347A
Cross Reference: N/A

MO-347A Mar 2021 view
Multichip Packages (MCP) and Discrete e•MMC, e•2MMC, and UFS

Item 142.01, 142.02.This section provides electrical interface items related to Multi-Chip Packages (MCP) and Stacked-Chip Scale Packages (SCSP) of mixed memory technologies including Flash (NOR and NAND), SRAM, PSRAM, LPDRAM, USF, etc. These items include die-on-die stacking within a single encapsulated package, package-on-package or module-in-package technologies, etc. The Section also contains Silicon Pad Sequence information for the various memory technologies to aid in the design and electrical optimization of the memory sub-system or complete memory stacked solution. 

MCP3.12.1 Mar 2021 view
NEAR-TERM DRAM LEVEL ROWHAMMER MITIGATION

RAM process node transistor scaling for power and DRAM capacity has made DRAM cells more sensitive to disturbances or transient faults. This sensitivity becomes much worse if external stresses are applied in a meticulously manipulated sequence, such as Rowhammer. Rowhammer related papers have been written outside of JEDEC, but some assumptions used in those papers didn’t explain the problem very clearly or correctly, so the perception for this matter is not precisely understood within the industry. This publication defines the problem and recommends following mitigations to address such concerns across the DRAM industry or academia. Item 1866.01.

JEP300-1 Mar 2021 view
SYSTEM LEVEL ROWHAMMER MITIGATION

A DRAM rowhammer security exploit is a serious threat to cloud service providers, data centers, laptops, smart phones, self-driving cars and IoT devices. Hardware research and development will take time. DRAM components, DRAM DIMMs, System-on-chip (SoC), chipsets and system products have their own design cycle time and overall life time. This publication recommends best practices to mitigate the security risks from rowhammer attacks. Item 1866.02.

JEP301-1 Mar 2021 view
HIGH BANDWIDTH MEMORY (HBM) DRAM

The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet (Note this version is the latest version for use with JESD235D). Committee item 1797.99L.

JESD235D Mar 2021 view
Addendum No. 1 to JESD79-4, 3D STACKED DRAM

This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58G

JESD79-4-1B Feb 2021 view
ADDENDUM No. 1 to JESD209-4, LOW POWER DOUBLE DATA RATE 4X (LPDDR4X)

This addendum defines LPDDR4X specifications that supersede the LPDDR4 Standard (JESD209-4) to enable low VDDQ operation of LPDDR4X devices to reduce power consumption. Item 1831.55A.

JESD209-4-1A Feb 2021 view
GRAPHICS DOUBLE DATA RATE 6 (GDDR6) SGRAM STANDARD

This document defines the Graphics Double Data Rate 6 (GDDR6) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments.  The purpose of this Specification is to define the minimum set of requirements for 8 Gb through 16 Gb x16 dual channel GDDR6 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR6 SGRAM vendors providing compatible devices. Some aspects of the GDDR6 standard such  as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. This document was created based on some aspects of the GDDR5 Standard (JESD212). Item 1836.99E.

JESD250C Feb 2021 view

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