Global Standards for the Microelectronics Industry
ROCS Workshop
Monday, May 9th in Monterey, CA
Online registration is now closed. Registration will be available onsite for $275 per person. PayPal is the only payment method available. Please note an account is not required to process a credit card using PayPal.
JEDEC looks forward to welcoming you back to in-person events with the 36th Annual ROCS (Reliability of Compound Semiconductors) Workshop. The Workshop will once again be co-located with the CS MANTECH Conference, with the objective of bringing together researchers, manufacturers and users of compound semiconductor devices.
2022 ROCS Agenda
Morning Session
7:30-8:00AM | Onsite check-in for registered attendees |
8:00-8:10AM | Welcome & Opening RemarksRandy Lewis, Northrop Grumman Corporation |
8:10-8:40AM | Standards for Wide Bandgap Power Conversion Device Reliability, Qualification, Test and Datasheet Parameters: Progress, Influence and Future Plans of JEDEC Committee JC-70Presented by: Tim McDonald, Infineon |
8:40-9:10AM | 900V GaN - Designing for ReliabilityPresented by: Ron Barr, Transphorm |
9:10-9:40AM | The Physics Behind Dynamic On-Resistance in eGaNFETSPresented by: Robert Strittmatter Ph.D., EPC |
9:40-10:00AM | Break |
10:00-10:30AM | SiC Power Device Reliability and Robustness - Failure Mechanisms and Predictive Life ModelsPresented by: Don Gajewski, Wolfspeed |
10:30-11:05AM | Comparison of Quantitative and Qualitative Thermal Measurement Techniques on Commercially Available GaN HEMT TransistorPresented by: Paul Hayes, Quantum Focus Instruments Corporation |
11:05-11:40AM | Practical Challenges of RF Accelerated Life TestingPresented by: Roland Shaw, Accel-RF Instruments Corporation |
11:40AM-Noon | Modeling of GaN HEMT Reliability Time Evolution and Field EffectsPresented by: Gergana Drandova, Qorvo |
Noon-1:00PM | Lunch |
Afternoon Session | |
1:00-1:20PM | Temperature Acceleration and Path to Reliability without Hermiticity for RF-GaN HEMTPresented by: Satyaki Ganguly, Wolfspeed |
1:20-1:40PM | High Temperature Operation of Beta-Ga2O3 MOSFETPresented by: Ahmad Islam, AFRL |
1:40-2:00PM | Reliability Study of GaAs and AIGaAs PIN DiodesPresented by: James Carter, MACOM |
2:00-4:00PM | Joint Session with the MANTECH Workshop / Advanced Packaging: Critical Ecosystems and Reliability ConsiderationsPresented by: David Shahin and Kaysar Rahim, Northrop Grumman Corporation |
4:00-4:20PM | High Temperature Stress Testing a Commercial SiGe HBT Process to Evaluate Transistor and Interconnect ReliabilityPresented by: Michael Langlois, Northrop Grumman Corporation |
4:20-4:40PM | Towards More Efficient and Accurate Quality and Reliability Estimates; Repairing Widely Used MethodsPresented by: Charles Recchia, IEEE Reliability Society |
4:40-5:00PM | Commercial-Off-the-Shelf AIGaN/GaN HEMT Long Term Aging Effects Study at Slightly Elevated Channel TemperaturesPresented by: Brian Poling, AFRL |
Presenters and topics subject to change without notice. | |