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This document replaces all past versions, however JESD220E, January 2020 (V 3.1), is available for reference only. This standard specifies the characteristics of the UFS electrical interface and the memory device. Such characteristics include (among others) low power consumption, high data throughput, low electromagnetic interference and optimization for mass memory subsystem efficiency. The UFS electrical interface is based on an advanced differential interface by MIPI M-PHY specification which together with the MIPI UniPro specification forms the interconnect of the UFS interface.

Committee(s): JC-64.1

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This annex JESD308-U0-RCB, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Raw Card B Annex defines the design detail of x8, 2 Package Ranks DDR5 UDIMM. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.11A

Committee(s): JC-45.3

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This annex JESD308-U0-RCA, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Raw Card AAnnex defines the design detail of x8, 1 Package Rank DDR5 UDIMM. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.13A

Committee(s): JC-45.3

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This annex JESD308-U4-RCD, DDR5 Unbuffered Dual Inline Memory Module with 4-bit ECC (EC4UDIMM) Raw Card D Annex defines the design detail of x8, 1 Package Rank DDR5 UDIMM with 4-bit ECC. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.14A

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This standard defines the specifications of interface parameters, signaling protocols, and features for DDR5 Serial Presence Detect EEPROM with Hub function (SPD5 Hub) and integrated Temperature Sensor (TS) as used for memory module applications. The Hub feature allows isolation of a local bus from a Controller host bus. The designation SPD5118 or generic term SPD5 Hub refers to the devices specified by this standard. Committee Item 600.02A

Committee(s): JC-40.1

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Editorial Terminology Update. This standard defines the DC and AC single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.25 V Pseudo  Open Drain I/Os. The 1.25 V Pseudo Open Drain interface, also known as POD125, is primarily used to communicate with GDDR6 SGRAM devices.

Committee(s): JC-16

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This document describes the serial presence detect (SPD) values for all DDR5 memory modules. In this context, “modules” applies to memory modules like traditional Dual In-line Memory Modules (DIMMs) or solder-down motherboard applications. The SPD data provides critical information about all modules on the memory channel and is intended to be use by the system's BIOS in order to properly initialize and optimize the system memory channels. Item 2260.01M

Committee(s): JC-45

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The JEDEC Board of Directors is responsible for establishing appropriate committees to conduct its standardization activities. These committees are assigned either service or product responsibilities. It is a primary function of each committee to propose JEDEC Standards and to formulate policies, procedures, formats, and other documents that are then submitted to the Board of Directors for action or approval. This publication identifies the service and product committees established by the Board of Directors and defines their scopes.

Committee(s): JC-COUN

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In some cases, JEDEC Committees have established additional policies and guidelines to facilitate the operation of a particular committee. Additional policies and guidelines are set forth here as an addendum to JM21 to facilitate the operation of particular committees. These policies are in addition to the requirements set forth in JM21 and in no case shall these additions contradict or supersede the requirements in JM21.

Committee(s): JC-JEDC

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This standard defines the electrical and mechanical requirements for 288-pin, 1.1 V (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR5 SDRAM UDIMMs). These DDR5 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in Computers. Item 2265.02B

Committee(s): JC-45.3

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This standard specifies the eXpanded Serial Peripheral Interface (xSPI) for Non Volatile Memory Devices, which provides high data throughput, low signal count, and limited backward compatibility with legacy Serial Peripheral Interface (SPI) devices. It is primarily for use in computing, automotive, Internet Of Things (IOT), embedded systems and mobile systems, between host processing and peripheral devices. The xSPI electrical interface can deliver up to 400 MBytes per second raw data throughput. Item 1775.74.

Committee(s): JC-42.4

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Release No. 16.This replaces Release 15 and includes the following editorial changes: 1) Replaced master/slave with controller/target 2) Checked for presence of other sensitive words 3) Added Tables and Figures in Table of Contents(Release 15, Item 1640.07)

Committee(s): JC-42.4

JESD21-C Solid State Memory Documents Main Page

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Release No. 21.01, Terminology update.This standard defines the specifications of interface parameters, signaling protocols, and features for Serial Presence Detect (SPD) EEPROMs and Temperature Sensor (TS) as used for memory module applications. The designation TSE2002av refers to the family of devices specified by this document.

Committee(s): JC-42.4

JESD21-C Solid State Memory Documents Main Page

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This standard defines the specifications of interface parameters, signaling protocols, and features for fifth generation Temperature Sensor (TS5) as used for memory module applications. These device operate on I2C and I3C two-wire serial bus interface. The designation TS5111 and TS5110 refers to the device specified by this document. Item 401.01E. Minor editorial changes listed in Annex A.

Committee(s): JC-40.1

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This document was written with the intent to provide information for quality organizations in both semiconductor companies and their customers to assess and make decisions on safe ESD CDM level requirements.

Committee(s): JC-14, JC-14.3

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This standard, JESD305-R4-RCF, DDR5 Registered Dual Inline Memory Module with 4-bit ECC (EC4 RDIMM) Raw Card F Annex, defines the design detail of x4, 1 Package Rank DDR5 RDIMM with 4-bit ECC. The common feature of DDR5 RDIMM, such as the connector pinout, can be found in the JESD305, DDR5 Load Reduced (LRDIMM) and Registered Dual Inline Memory Module (RDIMM) Common Standard. Item 2273.10.

Committee(s): JC-45.1

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This standard specifies the host and device interface for a DDR4 NVDIMM-N, which is a DIMM that achieves non-volatility by copying SDRAM contents into non-volatile memory (NVM) when host power is lost using an Energy Source managed by either the module or the host. This standard is used in conjunction with JESD248. Item 2233.54G

Committee(s): JC-45.6

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This standard, JESD305-R4-RCB, DDR5 Registered Dual Inline Memory Module with 4-bit ECC (EC4 RDIMM) Raw Card B Annex, defines the design detail of x4, 2 Package Ranks DDR5 RDIMM with 4-bit ECC. The common feature of DDR5 RDIMM, such as the connector pinout, can be found in the JESD305, DDR5 Load Reduced (LRDIMM) and Registered Dual Inline Memory Module (RDIMM) Common Standard. Item 2273.14.

Committee(s): JC-45.1

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The method described in this document applies to all reliability mechanisms associated with electronic devices. The purpose of this standard is to provide a reference for developing acceleration models for defect-related and wear-out mechanisms in electronic devices.

Committee(s): JC-14.3

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This specification defines the electrical and mechanical requirements for Raw Card D, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SO-DIMMs). These DDR4 SO-DIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.60.

Committee(s): JC-45.3

JESD21-C Solid State Memory Documents Main Page

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Designator: PDSO-N2-I#-R#x#Z#-CturET0p04 
Item: 11.11-1000, Access STP File for MO-343B  
Cross Reference: DG4.20 

Patents(): Nexperia BV: US8809121 B2

Committee(s): JC-11.11

JEP95 Registrations Main Page

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Designator: PDXC-PP2-I8p9-R107p6xp15Z26p0-DD2p95x1p1 
Item: 11.14-208, Access STP Files for SO-025B
Cross Reference: TBD

Committee(s): JC-11.14

JEP95 Registrations Main Page

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Designator: PDMA-N262-I0p5-R69p6x3p7Z30p15R2p55x02p35 Item: 11.14-207, Access STP Files for MO-337B Cross Reference: SO-024

Committee(s): JC-11.14

JEP95 Registrations Main Page

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This standard defines the electrical and mechanical requirements for 288-pin, 1.1 Volt (VDD and VDDQ), DDR5 Registered (RDIMM) and Load Reduced (LRDIMM), Double Data Rate (DDR), Synchronous DRAM Dual In-Line Memory Modules (DIMM). These 288-pin Registered and Load Reduced DDR5 SDRAM DIMMs are intended for use in server, workstation, and database environments. Item 2273.07.

Committee(s): JC-45.1

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The HBM3 DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM3 DRAM uses a wide-interface architecture to achieve high-speed, low power operation. Each channel interface maintains a 64 bit data bus operating at double data rate (DDR). Item 1837.98.

Committee(s): JC-42.2

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Designator: PBXC-K4_D#p##-MR36p05x14p5Z10p25-HS 
Item: 11.14-210, Access STP Files for SO-029A

Cross Reference: MO-348

Committee(s): JC-11.14

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This test method defines the requirements and procedures for terrestrial destructive* single-event effects (SEE) for example, single-event breakdown (SEB), single-event latch-up (SEL) and single-event gate rupture (SEGR) testing . It is valid when using an accelerator, generating a nucleon beam of either; 1) Mono-energetic protons or mono-energetic neutrons of at least 150 MeV energy, or 2) Neutrons from a spallation spectrum with maximum energy of at least 150 MeV. This test method does not apply to testing that uses beams with particles heavier than protons.

*This test method addresses a separate risk than does JESD89 tests for non-destructive SEE due to cosmic radiation effects on terrestrial applications.

Committee(s): JC-14.1

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This standard defines standard specifications for features and functionality, DC & AC interface parameters and test loading for definition of the DDR5 data buffer for driving DQ and DQS nets on DDR5 LRDIMM applications. The purpose is to provide a standard for the DDR5DB01 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 323.98K

Committee(s): JC-40.4

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This document describes the impact of measurement and/or setup parameters on switching losses of power semiconductor switches; focusing primarily on SiC MOSFET turn-on losses. In terms of turn-off losses, the behavior of SiC MOSFETs is similar to that of existing silicon based power MOSFETs, and as such are adequately represented in typical datasheets.

Committee(s): JC-70.2

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