Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # |
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DEFINITION OF THE SSTE32882 REGISTERING CLOCK DRIVER WITH PARITY AND QUAD CHIP SELECTS FOR DDR3/DDR3L/DDR3U RDIMM 1.5 V/1.35 V/1.25 V APPLICATIONS |
JESD82-29A.01 | Jan 2023 |
Terminology update.This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTE32882 registered buffer with parity for driving address and control nets on DDR3/DDR3L/DDR3U RDIMM applications.The purpose is to provide a standard for the SSTE32882 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Committee(s): JC-40, JC-40.3, JC-40.4 Free download. Registration or login required. |
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DEFINITION OF the SSTUB32865 28-bit 1:2 REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-24.01 | Jan 2023 |
Terminology update.This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUB32865 registered buffer with parity for 2 rank by 4 or similar high density DDR2 RDIMM applications. The SSTUB32865 is identical in functionality to the SSTU32865 but specifies tighter timing characteristics and a higher application frequency of up to 410 MHz. Committee(s): JC-40 Free download. Registration or login required. |
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DEFINITION OF THE SSTV16857 2.5 V, 14-BIT SSTL_2 REGISTERED BUFFER FOR DDR DIMM APPLICATIONS: |
JESD82-3B.01 | Jan 2023 |
Terminology update.This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTVN16857 14-bit SSTL_2 registered buffer for PC1600, PC2100, PC2700, and PC3200 DDR DIMM applications. Free download. Registration or login required. |
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DEFINITION OF THE SSTV32852 2.5 V 24-BIT TO 48-BIT SSTL_2 REGISTERED BUFFER FOR 1U STACKED DDR DIMM APPLICATIONS: |
JESD82-6A.01 | Jan 2023 |
Terminology update.This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the 32852 24-bit to 48-bit SSTL_2 registered buffer for stacked DDR DIMM applications. Committee(s): JC-40 Free download. Registration or login required. |
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DDR4 REGISTERING CLOCK DRIVER (DDR4RCD02) |
JESD82-31A.01 | Jan 2023 |
Terminology update. This document defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the DDR4 Registering Clock Driver (RCD) with parity for driving address and control nets on DDR4 RDIMM and LRDIMM applications. Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office. Committee(s): JC-40.4 Free download. Registration or login required. |
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LRDIMM DDR3 MEMORY BUFFER (MB) |
JESD82-30.01 | Jan 2023 |
Terminology update. The Load Reduced DIMM (LRDIMM) Memory Buffer (MB) supports DDR3 SDRAM main memory. The Memory Buffer allows buffering of memory traffic to support large memory capacities. Unlike DDR3 Register Buffer (SSTE32882), which only buffers Command, Address, Control and Clock, the LRDIMM Memory Buffer also buffers the Data (DQ) interface between the Memory Controller and the DRAM components. Free download. Registration or login required. |
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DEFINITION OF the SSTUB32866 1.8 V CONFIGURABLE REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-25.01 | Jan 2023 |
Terminology update.This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32866 registered buffer with parity test for DDR2 RDIMM applications. Committee(s): JC-40 Free download. Registration or login required. |
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DEFINITION OF THE SSTUB32868 REGISTERED BUFFER WITH PARITY FOR 2R x 4 DDR2 RDIMM APPLICATIONS |
JESD82-26.01 | Jan 2023 |
Terminology update. This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTUB32868 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Committee(s): JC-40 Free download. Registration or login required. |
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GRAPHICS DOUBLE DATA RATE (GDDR5) SGRAM STANDARDRelease Number: C.01 - Terminology update |
JESD212C.01 | Jan 2023 |
Terminology update. This document defines the Graphics Double Data Rate 5 (GDDR5) Synchronous Graphics Random Access Memory (SGRAM), including features, functionality, package, and pin assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC standard compatible 512 Mb through 8 Gb x32 GDDR5 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR5 SGRAM vendors providing JEDEC standard compatible devices. Some aspects of the GDDR5 standard such as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. Item 1733.70B Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office. Committee(s): JC-42.3C Free download. Registration or login required. |
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DEFINITION OF the SSTUA32S869 AND SSTUA32D869 REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-23.01 | Jan 2023 |
Terminology update. This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUA32S869 and SSTUA32D869 registered buffer with parity for driving heavy load on high-density DDR2 RDIMM applications. A typical application would be a 36 SDRAM planar DIMM. The SSTUA32S869 and SSTUA32D869 are identical in functionality to the SSTU32S869 and SSTU32D869 devices respectively but specify tighter timing characteristics and a higher application frequency of up to 410MHz. Committee(s): JC-40 Free download. Registration or login required. |
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Joint ESDA/JEDEC - CDM Technical User Guide |
JTR002-01-22 | Jan 2023 |
This report only covers the procedures and requirements specified in ANSI/ESDA/JEDEC JS-002. Free download. Registration or login required. |
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DDR5 Serial Presence Detect (SPD) ContentsTerminology update Release Number: Version 1.1 |
JESD400-5A.01 | Jan 2023 |
This standard describes the serial presence detect (SPD) values for all DDR5 memory modules. In this context, “modules” applies to memory modules like traditional Dual In-line Memory Modules (DIMMs) or solder-down motherboard applications. The SPD data provides critical information about all modules on the memory channel and is intended to be used by the system's BIOS in order to properly initialize and optimize the system memory channels. Committee(s): JC-45 Free download. Registration or login required. |
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FBDIMM: ADVANCED MEMORY BUFFER (AMB) |
JESDJESD82-20A.01 | Jan 2023 |
This document is a core specification for a Fully Buffered DIMM (FBD) memory system. This document, along with the other core specifications, must be treated as a whole. Information critical to a Advanced Memory Buffer design appears in the other specifications, with specific cross-references provided. Patents(): There are known patent issues that are common to all FBDIMM related specifications. See document for link to FBDIMM Patents. Committee(s): JC-40 Free download. Registration or login required. |
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HIGH BANDWIDTH MEMORY (HBM3) DRAM |
JESD238A | Jan 2023 |
The HBM3 DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM3 DRAM uses a wide-interface architecture to achieve high-speed, low power operation. Each channel interface maintains a 64 bit data bus operating at double data rate (DDR). Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office. Free download. Registration or login required. |
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Guidelines for measuring the threshold voltage (VT) of SiC MOSFETs |
JEP183A | Jan 2023 |
This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. Committee(s): JC-70.1 Free download. Registration or login required. |
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Guidelines for Gate Charge (QG) Test Method for SiC MOSFET |
JEP192 | Jan 2023 |
This publication defines a QGS, TOT, QGD and QGS, TH which can be extracted from a measured QG waveform for SiC MOSFETs. Free download. Registration or login required. |
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SELECTION OF BURN-IN / LIFE TEST CONDITIONS AND CRITICAL PARAMETERS FOR QML MICROCIRCUITS |
JEP163A | Jan 2023 |
This publication is a guideline to assist manufacturers of integrated circuits in defining conditions for burn-in and life test of their products to meet quality and reliability performance requirements of MIL-PRF-38535. Free download. Registration or login required. |
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Survey On Latch-Up Testing Practices and Recommendations for Improvements |
JEP193 | Jan 2023 |
This is a re-publication of a white paper which reports on a survey that has been conducted to better understand how the latch-up standard JESD78 revision E (JESD78E) is interpreted and has been used in the industry. Free download. Registration or login required. |
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ESDA/JEDEC JOINT STANDARD FOR ELECTROSTATIC DISCHARGE SENSITIVITY TESTING – CHARGED DEVICE MODEL (CDM) – DEVICE LEVEL |
JS-002-2022 | Jan 2023 |
This standard establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this standard. This test method combines the main features of JEDEC JESD22-C101 and ANSI/ESD S5.3.1. Free download. Registration or login required. |
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THERMAL SHOCK |
JESD22-A106B.02 | Jan 2023 |
This test is conducted to determine the robustness of a device to sudden exposure to extreme changes in temperature and to the effect of alternate exposures to these extremes. Free download. Registration or login required. |