Global Standards for the Microelectronics Industry
Standards & Documents Search
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RECOMMENDED ESD-CDM TARGET LEVELS |
JEP157A | Apr 2022 |
This document was written with the intent to provide information for quality organizations in both semiconductor companies and their customers to assess and make decisions on safe ESD CDM level requirements. Free download. Registration or login required. |
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STANDARD MANUFACTURERS IDENTIFICATION CODENOTE: JEP106U was in error starting with bank two an additional continuation code was added, JEP106U should be discarded. |
JEP106BE | Jan 2022 |
The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to http://www.jedec.org/Home/MIDCODE_request.cfm Free download. Registration or login required. |
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Test Procedure for the Measurement of Terrestrial Cosmic Ray Induced Destructive Effects in Power Semiconductor Devices |
JEP151A | Jan 2022 |
This test method defines the requirements and procedures for terrestrial destructive* single-event effects (SEE) for example, single-event breakdown (SEB), single-event latch-up (SEL) and single-event gate rupture (SEGR) testing . It is valid when using an accelerator, generating a nucleon beam of either; 1) Mono-energetic protons or mono-energetic neutrons of at least 150 MeV energy, or 2) Neutrons from a spallation spectrum with maximum energy of at least 150 MeV. This test method does not apply to testing that uses beams with particles heavier than protons. *This test method addresses a separate risk than does JESD89 tests for non-destructive SEE due to cosmic radiation effects on terrestrial applications.
Committee(s): JC-14.1 Free download. Registration or login required. |
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Guidelines for Representing Switching Losses of SIC MOSFETs in Datasheets |
JEP187 | Dec 2021 |
This document describes the impact of measurement and/or setup parameters on switching losses of power semiconductor switches; focusing primarily on SiC MOSFET turn-on losses. In terms of turn-off losses, the behavior of SiC MOSFETs is similar to that of existing silicon based power MOSFETs, and as such are adequately represented in typical datasheets. Committee(s): JC-70.2 Free download. Registration or login required. |
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Guideline to Specify a Transient Off-State Withstand Voltage Robustness Indicator in Datasheets for Lateral GaN Power Conversion Devices, Version 1.0 |
JEP186 | Dec 2021 |
This guideline describes different techniques for specifying a Transient Off-state Withstand Voltage Robustness Indicator in datasheets for lateral GaN power conversion devices. This guideline does not convey preferences for any of the specification types presented, nor does the guideline address formatting of datasheets. This guideline does not indicate nor require that the datasheet parameters are used in production tests, nor specify how the values were obtained. Committee(s): JC-70.1 Free download. Registration or login required. |
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COPY-EXACT PROCESS FOR MANUFACTURING |
JEP185 | Aug 2021 |
This publication defines the requirements for Copy-Exact Process (CEP) matching, real-time process control, monitoring, and ongoing assessment of the CEP. The critical element requirements for inputs, process controls, procedures, process indicators, human factors, equipment/infrastructure and matching outputs are given. Manufacturers, suppliers and their customers may use these methods to define requirements for process transfer within the constraints of their business agreements. Committee(s): JC-14.3 Free download. Registration or login required. |
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JC-42.6 MANUFACTURER IDENTIFICATION (ID) CODE FOR LOW POWER MEMORIES |
JEP166D | Apr 2021 |
This document defines the JC-42.6 Manufacturer ID. This document covers Manufacturer ID Codes for the following technologies: LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), LPDDR4 (JESD209-4), Wide-IO (JESD229), and Wide-IO2 (JESD229-2). The purpose of this document is to define the Manufacturer ID for these devices. Item No. 1725.03C. See Annex for additions/changes. To make a request for an ID code: https://www.jedec.org/id-codes-low-power-memories Committee(s): JC-42.6 Free download. Registration or login required. |
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ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING – REPORTING ESD WITHSTAND LEVELS ON DATASHEETS |
JEP178 | Apr 2021 |
This document is intended to guide device manufacturers in developing datasheets and to device customers in understanding datasheet entries. Committee(s): JC-14.3 Free download. Registration or login required. |
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GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION |
JEP184 | Mar 2021 |
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. Committee(s): JC-70.2 Free download. Registration or login required. |
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SYSTEM LEVEL ROWHAMMER MITIGATION |
JEP301-1 | Mar 2021 |
A DRAM rowhammer security exploit is a serious threat to cloud service providers, data centers, laptops, smart phones, self-driving cars and IoT devices. Hardware research and development will take time. DRAM components, DRAM DIMMs, System-on-chip (SoC), chipsets and system products have their own design cycle time and overall life time. This publication recommends best practices to mitigate the security risks from rowhammer attacks. Item 1866.02. Committee(s): JC-42 Free download. Registration or login required. |
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NEAR-TERM DRAM LEVEL ROWHAMMER MITIGATION |
JEP300-1 | Mar 2021 |
RAM process node transistor scaling for power and DRAM capacity has made DRAM cells more sensitive to disturbances or transient faults. This sensitivity becomes much worse if external stresses are applied in a meticulously manipulated sequence, such as Rowhammer. Rowhammer related papers have been written outside of JEDEC, but some assumptions used in those papers didn’t explain the problem very clearly or correctly, so the perception for this matter is not precisely understood within the industry. This publication defines the problem and recommends following mitigations to address such concerns across the DRAM industry or academia. Item 1866.01. Committee(s): JC-42 Free download. Registration or login required. |
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GUIDELINE FOR SWITCHING RELIABILITY EVALUATION PROCEDURES FOR GALLIUM NITRIDE POWER CONVERSION DEVICES |
JEP180.01 | Jan 2021 |
This document is intended for use by GaN product suppliers and related power electronic industries. It provides guidelines for evaluating the switching reliability of GaN power switches and assuring their reliable use in power conversion applications. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions and cascode GaN power switches. Committee(s): JC-70.1 Free download. Registration or login required. |
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APPLICATION THERMAL DERATING METHODOLOGIES: |
JEP149.01 | Jan 2021 |
This publication applies to the application of integrated circuits and their associated packages in end use designs. It summarizes the methodology of thermal derating and the suitability of such methodologies. Free download. Registration or login required. |
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Guidelines for measuring the threshold voltage (VT) of SiC MOSFETs |
JEP183 | Jan 2021 |
This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. Committee(s): JC-70.1 Free download. Registration or login required. |
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TEST METHOD FOR CONTINUOUS-SWITCHING EVALUATION OF GALLIUM NITRIDE POWER CONVERSION DEVICES |
JEP182 | Jan 2021 |
This document is intended for use in the GaN power semiconductor and related power electronic industries and provides guidelines for test methods and circuits to be used for continuous-switching tests of GaN power conversion devices. Committee(s): JC-70.1 Free download. Registration or login required. |
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SYSTEM LEVEL ESD: PART II: IMPLEMENTATION OF EFFECTIVE ESD ROBUST DESIGNSThis is an editorial revision, details can be found in Annex F. |
JEP162A.01 | Jan 2021 |
This document, while establishing the complex nature of System Level ESD, proposes that an efficient ESD design can only be achieved when the interaction of the various components under ESD conditions are analyzed at the system level. This objective requires an appropriate characterization of the components and a methodology to assess the entire system using simulation data. This is applicable to system failures of different categories (such as hard, soft, and electromagnetic interference (EMI)). This type of systematic approach is long overdue and represents an advanced design approach which replaces the misconception, as discussed in detail in JEP161, that a system will be sufficiently robust if all components exceed a certain ESD level. Free download. Registration or login required. |
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REQUIREMENTS FOR MICROELECTRONIC SCREENING AND TEST OPTIMIZATION: |
JEP121B | Dec 2020 |
The purpose of this document provides the basis for the optimization of 100% screening/stress operations and sample inspection test activities. This document is designed to assist the manufacturer in optimizing the test flow while maintaining and/or improving assurance of providing high quality and reliable product in an efficient manner. This will allow for optimization of testing that is not adding value, hence, reducing cycle time and costs. Free download. Registration or login required. |
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CHARACTERIZATION OF INTERFACIAL ADHESION IN SEMICONDUCTOR PACKAGES |
JEP167A | Nov 2020 |
This document identifies methods used for the characterization of die adhesion. It gives guidance which method to apply in which phase of the product or technology life cycle. Committee(s): JC-14.1 Free download. Registration or login required. |
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ECXML Guidelines for Electronic Thermal System Level Models – XML Requirements |
JEP181 | Sep 2020 |
This standard establishes the requirements for the exchange of electronic thermal system level simulation models between supplier and end user in a single neutral file format. The data is held in an XML format, conforming to an XML schema that this document describes. Committee(s): JC-15 Free download. Registration or login required. |
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ECXML Guidelines for Electronic Thermal System Level Models – XML Requirements Schema |
JEP181_Schema_R1p0 | Sep 2020 |
In conjunction with JEP181, for user support this file is the entire “XML Requirements Schema”. Committee(s): JC-15 Free download. Registration or login required. |
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DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0 |
JEP173 | Jan 2019 |
This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices. Committee(s): JC-70.1 Free download. Registration or login required. |
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SOLID STATE RELIABILITY ASSESSMENT QUALIFICATION METHODOLOGIES |
JEP143D | Jan 2019 |
The purpose of this publication is to provide an overview of some of the most commonly used systems and test methods historically performed by manufacturers to assess and qualify the reliability of solid state products. The appropriate references to existing and proposed JEDEC (or EIA) standards and publications are cited. This document is also intended to provide an educational background and overview of some of the technical and economic factors associated with assessing and qualifying microcircuit reliability. Free download. Registration or login required. |
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GUIDELINES FOR GaAs MMIC PHEMT/MESFET AND HBT RELIABILITY ACCELERATED LIFE TESTING |
JEP118A | Dec 2018 |
These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors. While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). Committee(s): JC-14.7 Free download. Registration or login required. |
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FOUNDRY PROCESS QUALIFICATION GUIDELINES - FRONT END TRANSISTOR LEVEL (Wafer Fabrication Manufacturing Sites) |
JEP001-2A | Sep 2018 |
This document describes transistor-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation. Committee(s): JC-14.2 Free download. Registration or login required. |
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FOUNDRY PROCESS QUALIFICATION GUIDELINES - BACKEND OF LIFE (Wafer Fabrication Manufacturing Sites) |
JEP001-1A | Sep 2018 |
This document describes backend-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation. Committee(s): JC-14.2 Free download. Registration or login required. |
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FOUNDRY PROCESS QUALIFICATION GUIDELINES – PRODUCT LEVEL (Wafer Fabrication Manufacturing Sites) |
JEP001-3A | Sep 2018 |
This document describes package-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation. Committee(s): JC-14.2 Free download. Registration or login required. |
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POTENTIAL FAILURE MODE AND EFFECTS ANALYSIS (FMEA) |
JEP131C | Aug 2018 |
This publication applies to electronic components and subassemblies product and or process development, manufacturing processes and the associated performance requirements in customer applications. These areas should include, but are not limited to: package design, chip design, process development, assembly, fabrication, manufacturing, materials, quality, service, and suppliers, as well as the process requirements needed for the next assembly. Committee(s): JC-14.4 Free download. Registration or login required. |
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PROCESS CHARACTERIZATION GUIDELINE |
JEP132A | Aug 2018 |
This guideline provides a methodology to characterize a new or existing process and is applicable to any manufacturing or service process. It describes when to use specific tools such as failure mode effects analysis (FEMA), design or experiments (DOE), measurement system evaluation (MSE), capability analysis (CpK), statistical process control (SPC), and problem solving tools. It also provides a brief description of each tool. Committee(s): JC-13 Free download. Registration or login required. |
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RECOMMENDED ESD TARGET LEVELS FOR HBM/MM QUALIFICATION |
JEP155B | Jul 2018 |
This document was written with the intent to provide information for quality organizations in both semiconductor companies and their customers to assess and make decisions on safe ESD level requirements. It will be shown through this document why realistic modifying of the ESD target levels for component level ESD is not only essential but is also urgent. The document is organized in different sections to give as many technical details as possible to support the purpose given in the abstract. In June 2009 the formulating committee approved the addition of the ESDA logo on the covers of this document. Please see Annex C for revision history. Free download. Registration or login required. |
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PART MODEL PACKAGE GUIDELINES FOR ELECTRONIC-DEVICE PACKAGES – XML REQUIREMENTS |
JEP30-P100.01 | May 2018 |
This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It forms part of the Part Model XML Schema, which covers the parental structure for the electrical, physical, thermal, assembly process classification data along with materials and substances that may be present in the supplied product or sub-products. This Guideline specifically focuses on the "Package" subsection of the Part Model. Committee(s): JC-11.2 Free download. Registration or login required. |
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PART MODEL ELECTRICAL SCHEMA |
JEP30-E101X | Apr 2018 |
In conjunction with JEP30-E100, for user support, this file is the entire “Part Model Electrical Schema” (JEP30-10 Part Model Schema, JEP30-e101 Part Model Thermal Schema, and JEP30-D10 Part Model Schema Types Dictionary). Committee(s): JC-11.2 Free download. Registration or login required. |
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PART MODEL ELECTRICAL GUIDELINES FOR ELECTRONIC-DEVICE PACKAGES – XML REQUIREMENTS |
JEP30-E100 | Apr 2018 |
This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It forms part of the Part Model XML Schema, which covers the parental structure for the electrical, physical, Electrical, assembly process classification data along with materials and substances that may be present in the supplied product or subproducts. This Guideline specifically focuses on the “Electrical” sub-section of the Part Model. Committee(s): JC-11.2 Free download. Registration or login required. |
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PART MODEL THERMAL SCHEMA |
JEP30-T101X | Mar 2018 |
In conjunction with JEP30-T100, for user support, this file is the entire “Part Model Thermal Schema” (JEP30-10 Part Model Schema, JEP30-T101 Part Model Thermal Schema, and JEP30-D10 Part Model Schema Types Dictionary). Committee(s): JC-11 Free download. Registration or login required. |
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PART MODEL ASSEMBLY PROCESS CLASSIFICATION SCHEMA |
JEP30-A101X | Mar 2018 |
In conjunction with JEP30-A100, for user support this file is the entire “Part Model Assembly Process Classification Schema” (JEP30-10 Part Model Schema, JEP30-A101 Part Model Assembly Process Classification Schema, and JEP30-D10 Part Model Schema Types Dictionary). Committee(s): JC-11 Free download. Registration or login required. |
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PART MODEL PACKAGE SCHEMA |
JEP30-P101X | Mar 2018 |
In conjunction with JEP30-P100, for user support thiis file is the entire “Part Model Package Schema” (JEP30-10 Part Model Schema, JEP30-P101 Part Model Package Schema, and JEP30-D10 Part Model Schema Types Dictionary). Committee(s): JC-11 Free download. Registration or login required. |
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CHIP-PACKAGE INTERACTION UNDERSTANDING, IDENTIFICATION AND EVALUATION |
JEP156A | Mar 2018 |
This publication references a set of frequently recommended and accepted JEDEC reliability stress tests. These tests are used for qualifying new and modified technology/ process/ product families, as well as individual solid state surface-mount products. Free download. Registration or login required. |
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PART MODEL THERMAL GUIDELINES FOR ELECTRONIC-DEVICE PACKAGES – XML REQUIREMENTS |
JEP30-T100 | Mar 2018 |
This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It forms part of the Part Model XML Schema, which covers the parental structure for the electrical, physical, thermal, assembly process classification data along with materials and substances that may be present in the supplied product or sub-products. This Guideline specifically focuses on the "Thermal" subsection of the Part Model. Committee(s): JC-11.2 Free download. Registration or login required. |
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PART MODEL ASSEMBLY PROCESS CLASSIFICATION GUIDELINES FOR ELECTRONIC-DEVICE PACKAGES – XML REQUIREMENTS |
JEP30-A100 | Feb 2018 |
This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It forms part of the Part Model XML Schema, which covers the parental structure for the electrical, physical, thermal, assembly process classification data along with materials and substances that may be present in the supplied product or subproducts. This Guideline specifically focuses on the “Assembly Process Classification” subsection of the Part Model. Committee(s): JC-11.2 Free download. Registration or login required. |
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PART MODEL GUIDELINES FOR ELECTRONIC-DEVICE PACKAGES – XML REQUIREMENTS |
JEP30 | Feb 2018 |
This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It covers several sub-sections such as electrical, physical, thermal, assembly process classification data along with materials and substances that may be present in the supplied product or sub-products. This Guideline specifically focuses on the parental structure, under which several sub-section listed above, can be contained and linked together within the Part Model parent structure. Committee(s): JC-11.2 Free download. Registration or login required. |
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ADAPTER TEST BOARD RELIABILITY TEST GUIDELINES |
JEP176 | Jan 2018 |
This publication describes guidelines for applying JEDEC reliability tests and recommended testing procedures to integrated circuits that require adapter test boards for electrical andreliability testing. These tests are used frequently in qualifying integrated circuits as a newproduct, a product family, or as products in a process which is being changed. Committee(s): JC-14.3 Free download. Registration or login required. |
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DDR4 PROTOCOL CHECKS |
JEP175 | Jul 2017 |
The intended use of this document is for the validation and debug of DDR4 based designs. This document contains protocol checks, sometimes referred to as memory access rules or protocol violations. This document contains a list of checks that can be used during the verification or debug stages of development to check that accesses to a DDR4 DRAM adhere to JESD79-4B. These checks are derived from JESD79-4B. Item 31509. Committee(s): JC-40.5 Free download. Registration or login required. |
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GUIDELINES FOR PACKING AND LABELING OF INTEGRATED CIRCUITS IN UNIT CONTAINER PACKING (Tubes, Trays, and Tape and Reel) |
JEP130B | Nov 2016 |
This document establishes guidelines for integrated circuit unit container and the next level (intermediate) container packing and labeling. The guidelines include tube/rail standardization, intermediate packing, date codes, tube labeling, intermediate container and shipping labels, and standardize tube quantities. Future revisions of this document will also include tray and reel guidelines. The objective of this publication is to promote the standardization of practices between manufacturers and distributors resulting in improved efficiency, profitability, and product quality. Committee(s): JC-14.4 Free download. Registration or login required. |
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UNDERSTANDING ELECTRICAL OVERSTRESS - EOS |
JEP174 | Sep 2016 |
This purpose of this white paper will be to introduce a new perspective about EOS to the electronics industry. As failures exhibiting EOS damage are commonly experienced in the industry, and these severe overstress events are a factor in the damage of many products, the intent of the white paper is to clarify what EOS really is and how it can be mitigated once it is properly comprehended. Committee(s): JC-14.3 Free download. Registration or login required. |
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FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES |
JEP122H | Sep 2016 |
This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc. Committee(s): JC-14.2 Available for purchase: $163.00 Add to Cart Paying JEDEC Members may login for free access. |
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SELECTION OF BURN-IN/LIFE TEST CONDITIONS AND CRITICAL PARAMETERS FOR QML MICROCIRCUITS |
JEP163 | Sep 2015 |
This publication is intended as a guideline to develop and establish conditions for burn-in and life test of MIL-PRF-38535 QML integrated circuits. These guidelines are intended to provide manufacturers with a consistent means of defining burn-in and life test stress and electrical test requirements acceptable to user organizations and for the development of Standard Military Drawings. Committee(s): JC-13.2 Free download. Registration or login required. |
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DISCONTINUING USE OF THE MACHINE MODEL FOR DEVICE ESD QUALIFICATIONStatus: Reaffirmed September 2020 |
JEP172A | Jul 2015 |
Over the last several decades the so called "machine model" (aka MM) and its application to the required ESD component qualification has been grossly misunderstood. The scope of this JEDEC document is to present evidence to discontinue use of this particular model stress test without incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the document's purpose is to provide the necessary technical arguments for strongly recommending no further use of this model for IC qualification. The published document should be used as a reference to propagate this message throughout the industry. Committee(s): JC-14.3 Free download. Registration or login required. |
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PROCEDURE FOR THE EVALUATION OF LOW-k/METAL INTER/INTRA-LEVEL DIELECTRIC INTEGRITY |
JEP159A | Jul 2015 |
This document is intended for use in the semiconductor IC manufacturing industry and provides reliability characterization techniques for low-k inter/intra level dielectrics (ILD) for the evaluation and control of ILD processes. It describes procedures developed for estimating the general integrity of back end-of-line (BEOL) ILD. Two basic test procedures are described, the Voltage-Ramp Dielectric Breakdown (VRDB) test, and the Constant Voltage Time-Dependent Dielectric Breakdown stress (CVS). Each test is designed for different reliability and process evaluation purposes. This document also describes robust techniques to detect breakdown and TDDB data analysis. Free download. Registration or login required. |
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GDDR5 MEASUREMENT PROCEDURES |
JEP171 | Aug 2014 |
This publication is to inform all industry participants of a unified procedure to enable consistent measurement across the industry. This document contains the measurement procedures for testing GDDR5. Committee(s): JC-42.3 Free download. Registration or login required. |
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CHARACTERIZATION AND MONITORING OF THERMAL STRESS TEST OVEN TEMPERATURESStatus: Reaffirmed September 2019 |
JEP153A | Mar 2014 |
This document provides an industry standard method for characterization and monitoring thermal stress test oven temperatures. The procedures described in this document should be used to insure thermal stress test conditions are being achieved and maintained during various test procedures. Free download. Registration or login required. |
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RELIABILITY QUALIFICATION OF SEMICONDUCTOR DEVICES BASED ON PHYSICS OF FAILURE RISK AND OPPORTUNITY ASSESSMENTStatus: Reaffirmed September 2019 |
JEP148B | Jan 2014 |
A concept is outlined, which proactively integrates qualification into the development process and provides a systematic procedure as support tool to development and gives early focus on required activities. It converts requirements for a product into measures of development and qualification in combination with a risk and opportunity assessment step and accompanies the development process as guiding and recording tool for advanced quality planning and confirmation. The collected data enlarge the knowledge database for DFR / BIR (design for reliability / building-in reliability) to be used for future projects. The procedure challenges and promotes teamwork of all involved disciplines. Free download. Registration or login required. |
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GUIDE TO STANDARDS AND PUBLICATIONS RELATING TO QUALITY AND RELIABILITY OF ELECTRONIC HARDWARE |
JEP70C | Oct 2013 |
This document gathers and organizes common standards and publications relating to quality processes and methods relating to the solid-state, microelectronics, and associated industries. This is intended to facilitate access to the applicable documents when working with electronic hardware. This will have a positive effect on quality and reliability as users gain more access to proper methods in designing, producing, and testing parts. Committee(s): JC-14.4 Free download. Registration or login required. |
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STRESS-TEST-DRIVEN QUALIFICATION OF AND FAILURE MECHANISMS ASSOCIATED WITH ASSEMBLED SOLID STATE SURFACE-MOUNT COMPONENTS |
JEP150.01 | Jun 2013 |
This publication contains a set of frequently recommended and accepted JEDEC reliability stress tests. These tests are used for qualifying new and modified technology/ process/ product families, as well as individual solid state surface-mount products, in particular leadless chip carriers, ball grid array (BGA) packages, direct chip attach die and packages with exposed pads that are attached to the PWB for thermal considerations. Assembly level testing may not be a prerequisite for device qualification; however, if the effect of assembly conditions on the component is not known, there could be reliability concerns for that component that are not evident in component level testing. As such, it is recommended that assembly level testing be performed to determine if there are any adverse effects on that component due to its assembly to a PWB. Free download. Registration or login required. |
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GUIDELINES FOR VISUAL INSPECTION AND CONTROL OF FLIP CHIP TYPE COMPONENTS (FCxGA)Status: Reaffirmed May 2018 |
JEP170 | Jan 2013 |
This publication provides description of defects observed in FCxGA components that can adversely impact end-user products and/or applications. It will also provide illustration on other defects that may be considered visual nonconformities since they should be less disruptive of quality or reliability to customer products. Finally, it will depict a method for visual inspection that can be utilized to identify these defects or visual nonconformities and guidance for disposition. Official criteria for product acceptance should be in actual product drawings and specifications. Committee(s): JC-14.1 Free download. Registration or login required. |
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LONG-TERM STORAGE GUIDELINES FOR ELECTRONIC SOLID-STATE WAFERS, DICE, AND DEVICESStatus: Reaffirmed September 2016 |
JEP160 | Nov 2011 |
This publication examines the LTS requirements of wafers, dice, and packaged solid-state devices. The user should evaluate and choose the best practices to ensure their product will maintain as-received device integrity and minimize age- and storage-related degradation effects. Free download. Registration or login required. |
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GUIDELINE FOR INTERNAL GAS ANALYSIS FOR MICROELECTRONIC PACKAGESStatus: Reaffirmed November 2020 |
JEP144A | Nov 2011 |
This guideline is applicable to hermetically sealed microelectronic components (including discrete semiconductors, monolithic and hybrid microcircuits). Specific cases with unique packaging, materials, or environmental constraints may not find all of the following information and procedures applicable. Committee(s): JC-13 Free download. Registration or login required. |
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SYSTEM LEVEL ESD PART 1: COMMON MISCONCEPTIONS AND RECOMMENDED BASIC APPROACHESStatus: ReaffirmedJune 2016 |
JEP161 | Jan 2011 |
This report is the first part of a two part document. Part I will primarily address hard failures characterized by physical damage to a system (failure category d as classified by IEC 61000-4-2). Soft failures, in which the system’s operation is upset without physical damage, are also critical and predominant in many cases. Free download. Registration or login required. |
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GUIDE FOR THE PRODUCTION AND ACQUISITION OF RADIATION-HARDNESS ASSURED MULTICHIP MODULES AND HYBRID MICROCIRCUITS: |
JEP133C | Jan 2010 |
A revised and expanded publication for suppliers and users of radiation hardness assured (RHA) multichip modules (MCMs) and hybrid microcircuits, is now available. The document provides guidance as to how to achieve, maintain and ensure required levels of radiation-hardness given the fact that the constituent dice can have different levels of hardness assurance. It also describes how to deal with the various radiation hardness situations that an MCM/Hybrid developer, procuring activity or user will encounter. The guide is intended to supplement three relevant performance specifications: MIL-PRF-38534, MIL-PRF-38535 and MIL-PRF-19500. Committee(s): JC-13.5, JC-13.4 Free download. Registration or login required. |
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3D CHIP STACK WITH THROUGH-SILICON VIAS (TSVS): Identifying, Evaluating and Understanding Reliability Interactions |
JEP158 | Nov 2009 |
To increase device bandwidth, reduce power and shrink form factor, microelectronics manufacturers are implementing three dimensional (3D) chip stacking using through silicon vias (TSVs). Chip stacking with TSVs combines silicon and packaging technologies. As a result, these new structures have unique reliability requirements. This document is a guideline that describes how to evaluate the reliability of 3D TSV silicon assemblies. Free download. Registration or login required. |
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GUIDELINES FOR SUPPLIER PERFORMANCE RATING:Status: ReaffirmedMay 2014 |
JEP146A | Jan 2009 |
The intent of this document is to establish guidelines and provide examples by which customers can measure their suppliers based on mutually agreed upon objective criteria. These results can then be used to improve communications between customers and suppliers. Free download. Registration or login required. |
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GUIDELINE FOR CHARACTERIZING SOLDER BUMP ELECTROMIGRATION UNDER CONSTANT CURRENT AND TEMPERATURE STRESSStatus: ReaffirmedJune 2011 |
JEP154 | Jan 2008 |
This document describes a method to test the electromigration (EM) susceptibility of solder bumps, including other types of bumps, such as solder capped copper pillars, used in flip-chip packages. The method is valid for Sn/Pb eutectic, high Pb, and Pb-free solder bumps. The document discusses the advantages and concerns associated with EM testing, as well as options for data analysis. Free download. Registration or login required. |