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This document describes an algorithm for performing the Standard Wafer Level Electromigration Accelerated Test (SWEAT) method with computer controlled instrumentation. The algorithm requires a separate iterative technique (not provided) to calculate the force current for a given target time to failure. This document does not specify what test structure to use with this procedure. However, users of this algorithm report its effectiveness on both straight-lines and via-terminated test structures. Some test-structures design features are provided in JESD87 and in ASTM 1259M - 96.

Committee(s): JC-14.2

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This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process.

Committee(s): JC-14.2

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This test allows the user to evaluate the moisture resistance of nonhermetic packaged solid state devices. The Unbiased Autoclave Test is performed to evaluate the moisture resistance integrity of non-hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test that employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors passing through it. This test is used to identify failure mechanisms internal to the package and is destructive.

Committee(s): JC-14.1

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This publication describes guidelines for applying JEDEC reliability tests and recommended testing procedures to integrated circuits that require adapter test boards for electrical andreliability testing. These tests are used frequently in qualifying integrated circuits as a newproduct, a product family, or as products in a process which is being changed.

Committee(s): JC-14.3

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This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in JESD35. Each source of error is described and its implications on test structure design is noted. This addendum can be used as a guide when designing test structures for the qualification and characterization of thin oxide reliability, specifically, by implementing accelerated voltage or current ramp tests.

Committee(s): JC-14.2

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The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments.

Committee(s): JC-14.3

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The beaded thermocouple temperature measurement guideline provides a procedure to accurately and consistently measure the temperature of semiconductor packages during exposure to thermal excursions. The guideline applications can include, but not limited to, temperature profile measurement in reliability test chambers and solder reflow operations that are associated with component assembly to printed wiring boards.

Committee(s): JC-14, JC-14.1

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This Board Level Drop Test Method is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface mounted components while duplicating the failure modes normally observed during product level test.

Committee(s): JC-14.1

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This document identifies methods used for the characterization of die adhesion. It gives guidance which method to apply in which phase of the product or technology life cycle.

Committee(s): JC-14.1

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This is a Joint Standard between ECIA, IPC, and JEDEC. The purpose of this standard is to establish an agreed set of worst case solder process limits (SnPb and Pb-free) which can safely be used for assembling non-semiconductor electronic components on common substrates, e.g., FR4, ceramic, polyimide, etc., along with documenting unique commodity specific exceptions. The documented process conditions are used to evaluate a non-semiconductor component’s PSL and MSL.

THIS DOCUMENT IS NOT AVAILABLE FOR FREE DOWNLOAD. However, this document is available to the JEDEC formulating Committee members, in the Members Area. The lead organization is ECIA.

Committee(s): JC-14

This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

Committee(s): JC-14.2

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This publication defines the requirements for Copy-Exact Process (CEP) matching, real-time process control, monitoring, and ongoing assessment of the CEP. The critical element requirements for inputs, process controls, procedures, process indicators, human factors, equipment/infrastructure and matching outputs are given. Manufacturers, suppliers and their customers may use these methods to define requirements for process transfer within the constraints of their business agreements.

Committee(s): JC-14.3

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This standard is invoked when a supplier becomes aware that a product’s environmental compliance declaration they provided or made available to their customers had an error that might cause a customer to draw an incorrect conclusion about the compliance of the product to legal requirements.

Committee(s): JC-14.4

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This standard establishes the requirements for timely notification to affected customers after a disaster has occurred at a supplier’s facility that will affect the committed delivery of product. This standard puts specific emphasis on notification, timing, and notification content which includes risk exposure, impact analysis, and recovery plans. This standard is applicable to suppliers of, and affected customers for, solid-state products and the constituent components used within.

Committee(s): JC-14.4

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The Cycled Temperature-humidity-bias Life Test is performed for the purpose of evaluating the reliability of nonhermetic packaged solid state devices in humid environments. It employs conditions of temperature cycling, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110.

Committee(s): JC-14, JC-14.1

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Over the last several decades the so called "machine model" (aka MM) and its application to the required ESD component qualification has been grossly misunderstood. The scope of this JEDEC document is to present evidence to discontinue use of this particular model stress test without incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the document's purpose is to provide the necessary technical arguments for strongly recommending no further use of this model for IC qualification. The published document should be used as a reference to propagate this message throughout the industry.

Committee(s): JC-14.3

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This standard defines methods for calculating the early life failure rate of a product, using accelerated testing, whose failure rate is constant or decreasing over time. For technologies where there is adequate field failure data, alternative methods may be used to establish the early life failure rate. The purpose of this standard is to define a procedure for performing measurement and calculation of early life failure rates. Projections can be used to compare reliability performance with objectives, provide line feedback, support service cost estimates, and set product test and screen strategies to ensure that the ELFR meets customers' requirements.

Committee(s): JC-14, JC-14.3

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This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94.

Committee(s): JC-14.1

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JESD22-A115 is a reference document; it is not a requirement per JESD47 (Stress Test Driven Qualification of Integrated Circuits). Machine Model (MM) as described in JESD22-A115 should not be used as a requirement for integrated circuit ESD qualification. Only human-body model (HBM) and charged-device model (CDM) are the necessary ESD qualification test methods as specified in JESD47.

Refer to JEP172: Discontinuing Use of the Machine Model for Device ESD Qualification for more information.

Committee(s): JC-14.1

The methodology described in this document is applicable for environmental acceptance testing of tin based surface finishes and mitigation practices for tin whiskers. This methodology may not be sufficient for applications with special requirements, (i.e., military, aerospace, etc.). Additional requirements may be specified in the appropriate requirements (procurement) documentation.

Committee(s): JC-14, JC-14.3

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The purpose of this test method is to identify the potential wave solder classification level of small plastic Surface Mount Devices (SMDs) that are sensitive to moisture-induced stress so that they can be properly packaged, stored, and handled to avoid subsequent mechanical damage during the assembly wave solder attachment and/or repair operations. This test method also provides a reliability preconditioning sequence for small SMDs that are wave soldered using full body immersion. This test method, may be used by users to determine what classification level should be used for initial board level reliability qualification.

Committee(s): JC-14, JC-14.1

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This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc.

Committee(s): JC-14.2

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Committee(s): JC-14.3

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The material in this test method has been superseded by JS-002-2018, published January 2019, which in turn has been superseded by JS-002-2022, published January 2023.

Committee(s): JC-14, JC-14.1

This document describes backend-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation.

Committee(s): JC-14.2

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This document describes package-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation.

Committee(s): JC-14.2

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This guide has be replaced by JESD241, September 2021

Committee(s): JC-14.2

This document describes a method to test the electromigration (EM) susceptibility of solder bumps, including other types of bumps, such as solder capped copper pillars, used in flip-chip packages. The method is valid for Sn/Pb eutectic, high Pb, and Pb-free solder bumps. The document discusses the advantages and concerns associated with EM testing, as well as options for data analysis.

Committee(s): JC-14, JC-14.1

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These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors.  While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). 

Committee(s): JC-14.7

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